DatasheetsPDF.com

AP9970AGP-HF

Advanced Power Electronics
Part Number AP9970AGP-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 4, 2014
Detailed Description AP9970AGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ R...
Datasheet PDF File AP9970AGP-HF PDF File

AP9970AGP-HF
AP9970AGP-HF

Overview
AP9970AGP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 3mΩ 250A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial through-hole applications.
G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 Rating 60 +20 250 120 120 480 333 -55 to 175 -55 to 175 Units V V A A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.
45 62 Units ℃/W ℃/W 1 201011032 Data and specifications subject to change without notice AP9970AGP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=60A VDS=VGS, ID=250uA VDS=10V, ID=60A VDS=48V, VGS=0V VGS=+20V, VDS=0V ID=40A VDS=48V VGS=10V VDS=30V ID=40A RG=3.
3Ω VGS=10V VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
60 2 - Typ.
110 170 25 95 30 130 70 120 1150 850 2.
1 Max.
Units 3 5 25 +100 270 4.
2 V mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)