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IPG20N04S4L-11

Infineon
Part Number IPG20N04S4L-11
Manufacturer Infineon
Description Power Transistor
Published Oct 5, 2014
Detailed Description IPG20N04S4L-11 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 11.6 20 V mW A Features • Dual ...
Datasheet PDF File IPG20N04S4L-11 PDF File

IPG20N04S4L-11
IPG20N04S4L-11

Overview
IPG20N04S4L-11 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 11.
6 20 V mW A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N04S4L-11 Package PG-TDSON-8-4 Marking 4N04L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active Operating and storage temperature I D,pulse E AS I AS V GS P tot T j, T stg I D=10A T C=25 °C Value Unit ID 20 A 20 80 80 15 ±16 41 -55 .
.
.
+175 mJ A V W °C Rev.
1.
0 page 1 2010-10-05 IPG20N04S4L-11 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current4) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D= 15µA V DS=40 V, V GS=0 V, T j=25 °C V DS=18 V, V GS=0 V, T j=85 °C2) Gate-source leakage current4) Drain-source on-state resistance4) I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.
5 V, I D=10A V GS=10 V, I D=17A 40 1.
2 1.
7 0.
01 2.
2 1 µA V 100 60 3.
7 K/W - 1 13.
1 10.
1 100 100 15.
5 11.
6 nA mW Rev.
1.
0 page 2 2010-10-05 IPG20N04S4L-11 Parameter Symbol Conditions min.
Values typ.
max.
Unit Dynamic characteristics2) Input capacitance4) Output capacitance4) Reverse transfer capacitance4) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2, 4) Gate to source charge Gate to drain char...


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