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IPG20N06S2L-65

Infineon
Part Number IPG20N06S2L-65
Manufacturer Infineon
Description Power Transistor
Published Oct 5, 2014
Detailed Description IPG20N06S2L-65 OptiMOS® Power-Transistor Product Summary V DS R DS(on),max3) ID 55 65 20 V mΩ A Features • Dual N-cha...
Datasheet PDF File IPG20N06S2L-65 PDF File

IPG20N06S2L-65
IPG20N06S2L-65

Overview
IPG20N06S2L-65 OptiMOS® Power-Transistor Product Summary V DS R DS(on),max3) ID 55 65 20 V mΩ A Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S2L-65 Package PG-TDSON-8-4 Marking 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active1) Symbol ID Conditions T C=25 °C, V GS=10 V Value Unit A 20 T C=100 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage Power dissipation one channel active Operating and storage temperature IEC climatic category; DIN IEC 68-1 14 I D,pulse E AS I AS V GS P tot T j, T stg - I D=10A T C=25 °C - 80 40 15 ±20 43 -55 .
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+175 55/175/56 mJ A V W °C Rev.
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0 page 1 2009-09-07 IPG20N06S2L-65 Parameter Symbol Conditio...


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