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AP30N30WI

Advanced Power Electronics
Part Number AP30N30WI
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2014
Detailed Description AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ L...
Datasheet PDF File AP30N30WI PDF File

AP30N30WI
AP30N30WI

Overview
AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 250V 68mΩ 30A Description AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .
The TO-3PF fullpack eliminates the need for additional insulating hardware in commercial-industrial applications.
G D S TO-3PF Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 250 ±30 30 120 83 0.
7 3 Units V V A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal ...


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