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AP30N30WI


Part Number AP30N30WI
Manufacturer Advanced Power Electronics
Title N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3PF fullpac...
Features Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.5 42 Units ℃/W ℃/W Data and specifications subject to change without notice 201216053-1/4 AP30N30WI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdo...

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AP30N30W : AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Parameter Rating 250 ±30 36 23 144 208 1.7 3 Units V V A A A W W/℃ mJ A ℃ ℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage.




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