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IRF830P-HF-3

Advanced Power Electronics
Part Number IRF830P-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2014
Detailed Description Advanced Power Electronics Corp. IRF830P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-...
Datasheet PDF File IRF830P-HF-3 PDF File

IRF830P-HF-3
IRF830P-HF-3


Overview
Advanced Power Electronics Corp.
IRF830P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, Halogen-free G S D BV DSS RDS(ON) ID 500V 1.
5Ω 4.
5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The IRF830P-3 is in the TO-220 through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached heatsink is required.
This device is well suited for low voltage applications such as DC/DC converters and DC motor drives.
G D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Rating 500 +20 4.
5 2.
8 18 74 0.
59 2 Units V V A A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 101 4.
5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.
7 62 Unit °C/W °C/W Ordering Information IRF830P-3TB RoHS-compliant TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200704202-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o IRF830P-HF-3 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=2.
7A VDS=VGS, ID=250uA VDS=10V, ID=2.
7A VDS=500V, V...


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