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IRF830I-HF

Part Number	IRF830I-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 5, 2014
Detailed Description	IRF830I-HF Halogen-Free Product Advanced Power Electronics Corp. Ease of Paralleling Fast Switching Characteristic Simp...
Datasheet	IRF830I-HF PDF File

Overview

IRF830I-HF Halogen-Free Product Advanced Power Electronics Corp.
Ease of Paralleling Fast Switching Characteristic Simple Drive Requirement RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 1.
5 4.
5A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost.
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 +20 4.
5 2.
8 18 36.
7 2 Units V V A A A W mJ A Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 101 4.
5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
4 62 Unit /W /W 1 200907281 Data & specifications subject to change without notice IRF830I-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=2.
7A VDS=VGS, ID=250uA VDS=10V, ID=2.
7A VDS=500V, VGS=0V VGS=+20V, VDS=0V ID=3.
1A VDS=400V VGS=10V VDD=250V ID=3.
1A RG=12 RD=80.
6 VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz VGS=10V Min.
500 2 - Typ.
2.
4 28 4 16 10 15 41 20 710 170 60 2 Max.
Units 1.
5 4 25 +100 45 1140 V S uA nA nC nC nC ns ns ns ns pF pF pF V Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off D...

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IRF830I-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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