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AP2762R-A-HF

Advanced Power Electronics
Part Number AP2762R-A-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2014
Detailed Description AP2762R-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristi...
Datasheet PDF File AP2762R-A-HF PDF File

AP2762R-A-HF
AP2762R-A-HF


Overview
AP2762R-A-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 1.
4Ω 7A Description AP2762 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
The TO-262 package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 +30 7 24 92.
6 2 Units V V A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 18 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.
35 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200810023 AP2762R-A-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=480V, VGS=0V VGS=+30V ID=6A VDS=200V VGS=10V VDD=200V ID=3A RG=50Ω,VGS=10V RD=67Ω VGS=0V VDS=30V f=1.
0MHz Min.
650 2 - Typ.
3.
5 31 7 13 33 29 186 46 100 8 Max.
Units 1.
4 4 100 +100 50 V Ω V S uA nA nC nC nC ns ns ns ns pF pF pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-o...


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