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AP04N60I-HF

Advanced Power Electronics
Part Number AP04N60I-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2014
Detailed Description AP04N60I-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic...
Datasheet PDF File AP04N60I-HF PDF File

AP04N60I-HF
AP04N60I-HF

Overview
AP04N60I-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 2.
35Ω 4A S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 +30 4 2.
2 15 36.
8 3 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 8 4 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
4 65 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201102251 AP04N60I-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2A VDS=480V, VGS=0V VGS=+30V, VDS=0V ID=1A VDS=480V VGS=10V VDD=300V ID=2A RG=50Ω,VGS=10V RD=150Ω VGS=0V VDS=25V f=1.
0MHz Min.
600 2 - Typ.
3.
4 19.
5 3.
5 8.
5 21 20 105 27 740 70 10 Max.
Units 2.
35 4 100 +100 31 1200 V Ω V S uA nA nC nC nC ns ns ns ...


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