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AP01L60H-A-HF

Part Number	AP01L60H-A-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 5, 2014
Detailed Description	AP01L60H/J-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated ▼ Fast Switching Speed ▼ S...
Datasheet	AP01L60H-A-HF PDF File

Overview

AP01L60H/J-A-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Rated ▼ Fast Switching Speed ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 12Ω 1A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP01L60J) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 650 +30 1 0.
8 3 29 0.
232 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 0.
5 1 0.
5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 4.
3 62.
5 110 Units ℃/W ℃/W ℃/W 1 201106171 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP01L60H/J-A-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 3 o Min.
650 2 - Typ.
0.
8 0.
8 4.
0 1.
0 1.
1 6.
6 5.
0 11.
7 9.
2 170 30.
7 5.
1 Max.
Units 12 4 10 100 +100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 VGS=10V, ID=0.
5A VDS=VGS, ...

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AP01L60H-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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