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AP03N70P-H

Advanced Power Electronics
Part Number AP03N70P-H
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2014
Detailed Description AP03N70P-H Pb Free Plating Product Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switchi...
Datasheet PDF File AP03N70P-H PDF File

AP03N70P-H
AP03N70P-H


Overview
AP03N70P-H Pb Free Plating Product Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 4.
4£[ 2.
5A Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
G The TO-220 package is universally preferred for all commercial-industrial applications.
The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits.
D S TO-220 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 700 ±30 2.
5 1.
6 8 54.
3 0.
44 2 Units V V A A A W W/¢J mJ A ¢J ¢J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 32 2.
5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
3 62 Units ¢J /W ¢J /W Data & specifications subject to change without notice 200417062-1/4 Downloaded from Elcodis.
com electronic components distributor AP03N70P-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS £GB VDSS/£G Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min.
700 2 - Typ.
0.
6 2 12 3 4 8.
5 6 19 8 590 50 6 3.
4 Max.
Units 4.
4 4 10 100 ±100 20 950 5.
1 V V/¢J £[ V S uA uA nA nC nC nC ns ns ns ns pF pF pF £[ Breakdown Voltage Temperature Coefficient Reference to 25¢J , ID=1mA RDS(ON...


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