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AP2301BGN-HF

Part Number	AP2301BGN-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 5, 2014
Detailed Description	AP2301BGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼...
Datasheet	AP2301BGN-HF PDF File

Overview

AP2301BGN-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S -20V 130mΩ - 2.
8A Description SOT-23 G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 20 +8 -2.
8 -2.
1 -12 1.
38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 200905122 Data and specifications subject to change without notice AP2301BGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.
5V, ID=-2.
8A VGS=-2.
5V, ID=-2A VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-16V, VGS=0V VGS=+8V, VDS=0V ID=-2A VDS=-16V VGS=-4.
5V VDS=-10V ID=-1A RG=3.
3Ω,VGS=-5V RD=10Ω VGS=0V VDS=-20V f=1.
0MHz f=1.
0MHz Min.
-20 -0.
5 - Typ.
7.
6 7.
5 1 3 8.
5 18 22 10 550 60 55 6 Max.
Units 130 190 -1.
25 -1 +100 12 1470 9 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time...

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AP2301BGN-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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