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AP3403GJ

Advanced Power Electronics
Part Number AP3403GJ
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2014
Detailed Description AP3403GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast...
Datasheet PDF File AP3403GJ PDF File

AP3403GJ
AP3403GJ

Overview
AP3403GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 200mΩ - 10A Description G D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The TO-252/TO-251 package is universally used for all commercialindustrial application.
G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating - 30 ± 20 -10 -8.
6 -48 36.
7 0.
29 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 3.
4 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200505031 Downloaded from Elcodis.
com electronic components distributor AP3403GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
-30 -1 - Typ.
-0.
1 Max.
Units 200 400 -3 -1 -25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A VGS=-4.
5V, ID=-4A 2 3.
8 1.
7 1.
6 6.
7 20.
8 14.
9 4.
4 217 103 31 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ± 20V ID=-6A VDS=-24V VGS=-4...


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