DatasheetsPDF.com

C2312

HGSemi
Part Number C2312
Manufacturer HGSemi
Description Silicon NPN POWER TRANSISTOR
Published Oct 8, 2014
Detailed Description G H FEATURES • • • • HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T– ...
Datasheet PDF File C2312 PDF File

C2312
C2312

Overview
G H FEATURES • • • • HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T– SEATING PLANE 4 DESCRIPTION Designed for RF power amplifier on HF band mobile radio applications.
T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1.
2.
3.
4.
K Specified 12V, 27MHz Characteristics PO = 18.
5W GP = 10.
5 dB min.
at 18.
5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMENSIONS UNIT mm inches A 15.
75 14.
48 0.
620 0.
570 B 10.
28 9.
66 0.
405 0.
380 C 4.
82 4.
07 0.
19 0.
16 D 0.
88 0.
64 0.
035 0.
025 F 3.
73 3.
61 0.
147 0.
142 G 2.
66 2.
42 0.
105 0.
095 H 3.
93 2.
8 0.
155 0.
110 J 0.
64 0.
46 0.
025 0.
018 K 14.
27 12.
70 0.
562 0.
500 L 1.
52 1.
15 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)