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AS8C401800

Alliance Semiconductor
Part Number AS8C401800
Manufacturer Alliance Semiconductor
Description 3.3V Synchronous SRAMs
Published Oct 10, 2014
Detailed Description 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect ◆ ◆ AS8C40...
Datasheet PDF File AS8C401800 PDF File

AS8C401800
AS8C401800

Overview
128K x 36, 256K x 18 3.
3V Synchronous SRAMs 3.
3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect ◆ ◆ AS8C403600 AS8C401800 Features 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial: – 150MHz 3.
8ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control ( GW l ( ), byte write enable (BWE), and byte writes ( BWx) 3.
3V core power supply Power down controlled by ZZ input 3.
3V I/O Optional - Boundary Scan JTAG Interface (IEEE 1149.
1 compliant) Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP).
Description ◆ ◆ ◆ ◆ ◆ ◆ ◆ TheAS8C403600/1800 are high- speed SRAMs organized as 128K x 36/256K x 18.
The AS8C403600/401800 SRAMs contain write, data, address and control registers.
Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.
The burst mode feature offers the highest level of pe...


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