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AS8C801800

Alliance Semiconductor
Part Number AS8C801800
Manufacturer Alliance Semiconductor
Description 3.3V Synchronous SRAMs
Published Oct 10, 2014
Detailed Description 256K X 36, 512K X 18 3.3V Synchronous SRAMs AS8C803600 3.3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycl...
Datasheet PDF File AS8C801800 PDF File

AS8C801800
AS8C801800

Overview
256K X 36, 512K X 18 3.
3V Synchronous SRAMs AS8C803600 3.
3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycle Deselect Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 150MHz 3.
8ns clock access time ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.
3V core power supply Power down controlled by ZZ input 3.
3V I/O supply (VDDQ) Packaged in a JEDEC Standard 100-pin thin plastic quad flatpack (TQFP) Description The 256K x 36 / 512K x 18.
The SRAMs contain write, data, address and control registers.
Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.
The burst mode feature offers the highest level of performance to the system designer, as the AS8C803600/801800 can provide four cycles of data for a single address presented to the SRAM.
An inte...


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