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R1RP0408DGE-2PR

Renesas
Part Number R1RP0408DGE-2PR
Manufacturer Renesas
Description 4M High Speed SRAM
Published Oct 10, 2014
Detailed Description R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0288EJ0100 Rev.1.00 Nov.18.19 Description The R...
Datasheet PDF File R1RP0408DGE-2PR PDF File

R1RP0408DGE-2PR
R1RP0408DGE-2PR

Overview
R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0288EJ0100 Rev.
1.
00 Nov.
18.
19 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit.
It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.
It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.
It is packaged in 400mil 36-pin plastic SOJ.
Features • Single 5.
0V supply: 5.
0V ± 10% • Access time: 12ns (max) • Completely static memory ⎯ No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible ⎯ All inputs and outputs • Operating current: 130mA (max) • TTL standby current: 40mA (max) • CMOS standby current : 5mA (max) : 1.
0mA (max) (L-version) • Data retention current : 0.
5mA (max) (L-version) • Data retention voltage : 2.
0V (min) (L-version) • Center VCC and VSS type pin out Ordering Information Type No.
R1RP0408DGE-2PR R1RP0408DGE-2LR Access time 12ns 12ns Version Normal L-Version Package 400-mil 36-pin plastic SOJ R10DS0288EJ0100 Rev.
1.
00 Nov.
18.
19 Page 1 of 11 R1RP0408D Series Pin Arrangement Pin Description A0 to A18 I/O1 to I/O8 CS# OE# WE# VCC VSS NC Pin name Address input Data input/output Chip select Output enable Write enable Power supply Ground No connection Function R10DS0288EJ0100 Rev.
1.
00 Nov.
18.
19 Page 2 of 11 R1RP0408D Series Block Diagram R10DS0288EJ0100 Rev.
1.
00 Nov.
18.
19 Page 3 of 11 R1RP0408D Series Operation Table CS# H L L L L Note: H: OE#  H L H L VIH, L: VIL, : WE#  H H L L VIH or VIL Mode Standby Output disable Read Write Write VCC current ISB, ISB1 ICC ICC ICC ICC I/O High-Z High-Z DOUT DIN DIN Ref.
cycle ⎯ ⎯ Read cycle (1) to (3) Write cycle (1) Write cycle (2) Absolute Maximum Ratings Parameter Symbol Value Unit Supply voltage relative to VSS VCC −0.
5 to +7.
0 V Volt...


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