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R1RP0404DGE-2LR Datasheet PDF


Part Number R1RP0404DGE-2LR
Manufacturer Renesas
Title 4M High Speed SRAM
Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-tra...
Features
• Single 5.0 V supply: 5.0 V ± 10%
• Access time 12 ns (max)
• Completely static memory  No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible  All inputs and outputs
• Operating current: 130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current :...

File Size 168.59KB
Datasheet R1RP0404DGE-2LR PDF File








Similar Ai Datasheet

R1RP0404DGE-2PR : The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply: 5.0 V ± 10% • Access time 12 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible  All inputs and outputs • Operating current: 130 mA (max) • TTL standby cur.




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