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R1LV0416DSB-5SI

Renesas
Part Number R1LV0416DSB-5SI
Manufacturer Renesas
Description 4M SRAM
Published Oct 10, 2014
Detailed Description R1LV0416D Series 4M SRAM (256-kword × 16-bit) REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbi...
Datasheet PDF File R1LV0416DSB-5SI PDF File

R1LV0416DSB-5SI
R1LV0416DSB-5SI

Overview
R1LV0416D Series 4M SRAM (256-kword × 16-bit) REJ03C0311-0100 Rev.
1.
00 May.
24.
2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.
15µm CMOS and TFT technologies.
R1LV0416D Series has realized higher density, higher performance and low power consumption.
The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems.
The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch ball grid array.
Features • Single 3.
0 V supply: 2.
7 V to 3.
6 V • Fast access time: 55/70 ns (max) • Power dissipation:  Standby: 3 µW (typ) (VCC = 3.
0 V) • Equal access and cycle times • Common data input and output.
 Three state output • Battery backup operation.
 2 chip selection for battery backup • Temperature Range: -40 to +85°C Rev.
1.
00, May.
24.
2007, page 1 of 15 R1LV0416D Series Ordering Information Type No.
R1LV0416DSB-5SI R1LV04...


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