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H57V2622GMR-75X

Part Number	H57V2622GMR-75X
Manufacturer	Hynix Semiconductor
Description	256Mb Dual Die Synchronous DRAM
Published	Oct 11, 2014
Detailed Description	www.DataSheet4U.com 256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a gener...
Datasheet	H57V2622GMR-75X PDF File

Overview

www.
DataSheet4U.
com 256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
0 / Oct.
2009 1 www.
DataSheet4U.
com 111 Synchronous DRAM Memory 256Mbit H57V2622GMR Series Document Title 256Mbit (8M x32) Synchronous DRAM Revision History Revision No.
0.
1 1.
0 History Initial Draft Release Draft Date Sep.
2009 Oct.
2009 Remark Preliminary Rev 1.
0 / Oct.
2009 2 www.
DataSheet4U.
com 111 Synchronous DRAM Memory 256Mbit H57V2622GMR Series DESCRIPTION The Hynix H57V2622GMR Synchronous DRAM (Dual Die) ideally suited for the consumer memory applications which requires large memory density and high bandwidth uses Hinix’s 128Mb SDR monolithic die and has similar functionality.
Synchronous DRAM is a type of DRAM which operates in synchronization with input clock.
The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK).
The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x32 Input/ Output bus.
All the commands are latched in synchronization with the rising edge of CLK.
The Synchronous DRAM provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page.
An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
The Synchronous DRAM uses an internal pipelined architecture to achieve high-speed operation.
This architecture is compartible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access.
Precharging one bank while accessing one of the other three banks will hide the precharge cycles ...

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