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H55S5122EFR

Hynix Semiconductor
Part Number H55S5122EFR
Manufacturer Hynix Semiconductor
Description 512Mbit (16Mx32bit) Mobile SDR Memory
Published Oct 11, 2014
Detailed Description 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array ...
Datasheet PDF File H55S5122EFR PDF File

H55S5122EFR
H55S5122EFR

Overview
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / Sep.
2010 1 il;o;nar 512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series Document Title 4Bank x 4M x 32bits Synchronous DRAM Revision History Revision No.
History Draft Date Remark 1.
0 1.
1 1.
2 - First Version Release - Add AC Overshoot/Undershoot Specification - Correction Feb.
2010 Feb.
2010 Sep.
2010 Rev 1.
2 / Sep.
2010 2 il;o;nar 512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series DESCRIPTION The Hynix H55S5122EFR is suited for non-PC application which use the batteries such as PDAs, 2.
5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, hand-held PCs.
The Hynix 512M Mobile SDRAM is 536,870,912-bit CMOS Mobile Synchronous DRAM(Mobile SDR), ideally suited for the main memory applications which requires large memory density and high bandwidth.
It is organized as 4banks of 4,194,304x32.
Mobile SDRAM is a type of DRAM which operates in synchronization with input clock.
The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK).
The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x32 Input/ Output bus.
All the commands are latched in synchronization with the rising edge of CLK.
The Mobile SDRAMs provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page.
An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
The Mobile SDRAM uses an internal ...


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