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H5MS2562JFR-E3M

Part Number	H5MS2562JFR-E3M
Manufacturer	Hynix Semiconductor
Description	Mobile DDR SDRAM 256Mbit (16M x 16bit)
Published	Oct 11, 2014
Detailed Description	256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Ar...
Datasheet	H5MS2562JFR-E3M PDF File

Overview

256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / July.
2009 1 256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Document Title 256Mbit (4Bank x 4M x 16bits) MOBILE DDR SDRAM Revision History Revision No.
0.
1 0.
2 1.
0 1.
1 1.
2 - Initial Draft - IDD Specification updated - The final version - Insert DDR370 DC/AC Characteristics - Omit a typo in package information History Draft Date May 2008 May 2008 Nov.
2008 Apr.
2009 July.
2009 Remark Preliminary Preliminary This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / July.
200...

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H5MS2562JFR-E3M Mobile DDR SDRAM 256Mbit (16M x 16bit) - Hynix Semiconductor

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