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Si2319CDS

Part Number	Si2319CDS
Manufacturer	Vishay Siliconix
Description	P-Channel 40 V (D-S) MOSFET
Published	Oct 12, 2014
Detailed Description	Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES ID (A)a - 4.4 7 nC - 3.7 Qg (Typ.) PRODUCT SUMMARY VDS...
Datasheet	Si2319CDS PDF File

Overview

Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES ID (A)a - 4.
4 7 nC - 3.
7 Qg (Typ.
) PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) 0.
077 at VGS = - 10 V 0.
108 at VGS = - 4.
5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-236 (SOT-23) • Load Switch • DC/DC Converter S G 1 3 D G S 2 Top View Si2319CDS (P7)* * Marking Code Ordering Information: Si2319CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 40 ± 20 - 4.
4 - 3.
5 - 3.
1b, c - 2.
5b, c - 20 - 2.
1 - 1b, c 2.
5 1.
6 1.
25b, c 0.
8b, c - 55 to 150 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit °C/W Notes: a.
Based on TC = 25 °C.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 5 s.
d.
Maximum under steady state conditions is 166 °C/W.
Document Number: 66709 S10-1286-Rev.
A, 31-May-10 www.
vishay.
com 1 Si2319CDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise...

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Si2319CDS P-Channel 40 V (D-S) MOSFET - Vishay Siliconix

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