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RT1N431M

Isahaya Electronics Corporation
Part Number RT1N431M
Manufacturer Isahaya Electronics Corporation
Description Transistor
Published Oct 12, 2014
Detailed Description ＲＴ１Ｎ４３１Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION...
Datasheet PDF File RT1N431M PDF File

RT1N431M
RT1N431M

Overview
ＲＴ１Ｎ４３１Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N431X is a one chip transistor with built-in bias resistor,PNP type is RT1P431X.
RT1N431U 1.
6 OUTLINE DRAWING RT1N431C 2.
5 UNIT：mm FEATURE ・Built-in bias resistor (R1=4.
7kΩ,R2=4.
7kΩ).
www.
DataSheet4U.
com 0.
5 0.
4 0.
8 0.
4 0.
5 1.
5 0.
5 0.
3 ① ② ③ 0.
95 ① ② ③ 2.
9 1.
90 1.
6 1.
0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit.
0.
7 0.
15 1.
1 0.
55 0.
8 0.
16 0～0.
1 R1 B (IN) R2 C (OUT) JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector E (GND) RT1N431M RT1N431S 0.
425 4.
0 2.
1 1.
25 0.
425 RT1N431T 0～0.
1 Equivalent circuit 0.
95 0.
5 0.
2 0.
8 0.
2 0.
65 3.
0 0.
3 0.
4 ① ② ③ ① ② ③ 2.
0 1.
3 0.
65 1.
2 0.
8 14.
0 1.
0 1.
0 0.
1 0.
45 0.
9 0.
7 1.
27 1.
27 0.
4 2.
5 ① ② ③ JEITA：－ JEDEC：－ Terminal Connector ①：Emitter ②：Collector ③：Base JEITA：SC-70 JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0～0.
1 0.
15 0.
45 0.
4 JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION 0.
25 0.
4 ＲＴ１Ｎ４３１Ｘ SERIES MAXIMUM RATING (Ta=25℃) SYMBOL ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ Ｉ ＣＭ ＰＣ www.
DataSheet4U.
com Ｔｊ Ｔｓｔｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type RT1N431T RT1N431U RATING RT1N431M 50 10 50 100 200 150 RT1N431C RT1N431S UNIT V V V mA mA mW ℃ ℃ 125 （※ ） +125 -55～+125 125 450 +150 -55～+150 LIMIT TYP Junction temperature Storage temperature ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） ＶＩ（ＯＮ） ＶＩ（ＯＦＦ） Ｒ１ Ｒ２／Ｒ１ ｆＴ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input o...


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