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MT46H128M16LF

Part Number	MT46H128M16LF
Manufacturer	Micron Technology
Description	Mobile Low-Power DDR SDRAM
Published	Oct 13, 2014
Detailed Description	2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF...
Datasheet	MT46H128M16LF PDF File

Overview

2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4 Features • VDD/VDDQ = 1.
70–1.
95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data; one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.
8V LVCMOS-compatible inputs • Temperature-compensated self refresh (TCSR) • Partial-array self refresh (PASR) • Deep power-down (DPD) • Status read ...

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MT46H128M16LF Mobile Low-Power DDR SDRAM - Micron Technology

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