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MT28F400B5

Micron Technology
Part Number MT28F400B5
Manufacturer Micron Technology
Description SMART 5 BOOT BLOCK FLASH MEMORY
Published Oct 14, 2014
Detailed Description 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply (Smart 5) 0.3µm Process Te...
Datasheet PDF File MT28F400B5 PDF File

MT28F400B5
MT28F400B5

Overview
4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply (Smart 5) 0.
3µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP application/production programming 12V ±5% VPP compatibility production programming • Address access times: 60ns, 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • Byte- or word-wide READ and WRITE (MT28F400B5, 256K x 16/512K x 8) • Byte-wide READ and WRITE only (MT28F004B5, 512K x 8) • TSOP and SOP packaging options 40-Pin TSOP Type I 48-Pin TSOP Type I 44-Pin SOP GENERAL DESCRIPTION The MT28F004B5 (x8) and MT28F400B5 (x16, x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits).
Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC.
Due to process technology advances, 5V VPP is optimal for application and production programming.
For backward compatibility with SmartVoltage technology, 12V VPP is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours.
These devices are fabricated with Micron’s advanced CMOS floating-gate process.
The MT28F004B5 and MT28F400B5 are organized into seven separately erasable blocks.
To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block.
Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences.
This block may be used to store code implemented in low-level system recovery.
The remaining blocks vary in density a...


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