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S-L2N7002LT1G

Leshan Radio Company
Part Number S-L2N7002LT1G
Manufacturer Leshan Radio Company
Description Small Signal MOSFET
Published Oct 14, 2014
Detailed Description LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • • ESD Protected:1000V • S- Prefix...
Datasheet PDF File S-L2N7002LT1G PDF File

S-L2N7002LT1G
S-L2N7002LT1G

Overview
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.
) – Continuous TC = 100°C (Note 1.
) – Pulsed (Note 2.
) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID Value 60 60 ±115 ±75 ±800 Unit Vdc Vdc mAdc L2N7002LT1G S-L2N7002LT1G 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements.
1 2 CASE 318, STYLE 21 SOT– 23 (TO–236AB) Simplified Schematic IDM Gate 1 VGS VGSM ±20 ±40 Vdc Vpk Source 2 3 Drain THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.
) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina S...


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