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STM4886E

SamHop Microelectronics
Part Number STM4886E
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description Green Product STM4886E Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PR...
Datasheet PDF File STM4886E PDF File

STM4886E
STM4886E

Overview
Green Product STM4886E Ver 1.
0 S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
ID 17.
8A R DS(ON) (m Ω) Max 5 @ VGS=10V 7.
5 @ VGS=4.
5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 30 ±20 TA=25°C TA=70°C 17.
8 14.
2 89 289 TA=25°C TA=70°C 2.
5 1.
6 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice.
Jun,26,2010 1 www.
samhop.
com.
tw STM4886E Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±10 uA uA VDS=VGS , ID=250uA VGS=10V , ID=17.
8A VGS=4.
5V , ID=14.
5A VDS=5V , ID=17.
8A 1 1.
8 4 5.
5 55 3 5 7.
5 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=15V,VGS=0V f=1.
0MHz 3570 640 560 68 102 170 68 68 32 7 19 10 0.
795 1.
2 SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V ID=1A VGS=10V RGEN= 6 ohm VDS=15V,ID=17.
8A,VGS=10V VDS=15V,ID=17.
8A,VGS=4.
5V VDS=15V,ID=...


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