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STM201N

Part Number	STM201N
Manufacturer	SamHop Microelectronics
Description	N-Channel MOSFET
Published	Oct 15, 2014
Detailed Description	Green Product STM201N Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Tr...
Datasheet	STM201N PDF File

Overview

Green Product STM201N Ver 1.
0 S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ID 4A R DS(ON) (m Ω) Typ 110 @ VGS=10V 170 @ VGS=4.
5V S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 4 3.
5 21 4 TC=25°C TC=70°C 3.
4 2.
4 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 44 °C/W Details are subject to change without notice.
Oct,08,2010 1 www.
samhop.
com.
tw STM201N Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=2A VGS=4.
5V , ID=1A VDS=10V , ID=2A 1 1.
8 110 170 5 3 140 245 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.
0MHz 480 47 29 pF pF pF VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=2A,VGS=10V VDS=50V,ID=2A, VGS=10V 9.
8 10.
2 18 8.
5 7.
8 1.
3 2.
9 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=...

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STM201N N-Channel MOSFET - SamHop Microelectronics

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