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STT3405P

SeCoS
Part Number STT3405P
Manufacturer SeCoS
Description P-Channel MOSFET
Published Oct 15, 2014
Detailed Description STT3405P Elektronische Bauelemente -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET RoHS Compliant Produc...
Datasheet PDF File STT3405P PDF File

STT3405P
STT3405P

Overview
STT3405P Elektronische Bauelemente -4.
9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
A E 6 5 4 TSOP-6 L B F DG 1 2 3 C K H J FEATURES    Low RDS(on) provides higher efficiency and extends battery life.
Miniature TSOP-6 surface mount package saves board space.
High power and current handling capability.
REF.
A B C D E F PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 1.
10 MAX.
1.
90 REF.
0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
10 0.
60 REF.
0.
12 REF.
0° 10° 0.
95 REF.
D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings -20 ±12 -4.
9 -4.
0 -20 -1.
7 2 1.
3 -55 ~ 150 62.
5 110 Unit V V A A A W °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA= 25°C TA= 70°C PD Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Tj, Tstg Thermal Resistance Ratings t ≦ 5 sec RJA °C / W Notes: 1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
06-Jan-2011 Rev.
A Page 1 of 4 STT3405P Elektronische Bauelemente -4.
9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise s...


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