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STT6601

SeCoS
Part Number STT6601
Manufacturer SeCoS
Description MOSFET
Published Oct 15, 2014
Detailed Description STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel E...
Datasheet PDF File STT6601 PDF File

STT6601
STT6601

Overview
STT6601 Elektronische Bauelemente (N-Ch) 2.
8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.
8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.
FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients a...


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