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STT02N20

SamHop Microelectronics
Part Number STT02N20
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description Green Product STT02N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect T...
Datasheet PDF File STT02N20 PDF File

STT02N20
STT02N20

Overview
Green Product STT02N20 Ver 1.
0 S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V ID 1.
4A R DS(ON) ( Ω) Typ 1.
22 @ VGS=10V 1.
29 @ VGS=4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Surface Mount Package.
D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d a c Limit 200 ±20 TA=25°C TA=70°C 1.
4 1.
1 9 3.
75 TA=25°C TA=70°C 3 1.
9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice.
May,22,2014 1 www.
samhop.
com.
tw STT02N20 Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=160V , VGS=0V 200 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=0.
7A VGS=4.
5V , ID=0.
7A VDS=10V , ID=0.
7A 1 1.
8 1.
22 1.
29 1.
3 3 1.
53 1.
74 V ohm ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=25V,VGS=0V f=1.
0MHz 245 25 13 VDD=100V ID=0.
7A VGS=10V RGEN= 6 ohm VDS=100V,ID=0.
7A,VGS=10V VDS=100V,ID=0.
7A,VGS=4.
5V VDS=100V,ID=0.
7A, VGS=10V 8.
6 8.
8 15 3.
5 3.
9 2.
4 0.
9 1.
3 ns ns ns ns nC nC nC nC ...


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