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Si4450DY

TEMIC
Part Number Si4450DY
Manufacturer TEMIC
Description N-Channel Enhancement-Mode MOSFET
Published Oct 15, 2014
Detailed Description Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.024 @ VGS = 10 V 0.03 @ VGS = 6.0 V...
Datasheet PDF File Si4450DY PDF File

Si4450DY
Si4450DY

Overview
Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.
024 @ VGS = 10 V 0.
03 @ VGS = 6.
0 V ID (A) "7.
5 "6.
5 D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 60 "20 "7.
5 "5.
5 "50 2.
1 2.
5 1.
6 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600.
Please request FaxBack document #1226.
Symbol RthJA Limit 50 Unit _C/W Siliconix S-47958—Rev.
C, 15-Apr-96 1 Si4450DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.
5 A VGS = 6.
0 V, ID = 6.
5 A VDS = 15 V, ID = 7.
5 A IS = 2.
1 A, VGS = 0 V 20 0.
020 0.
025 18.
5 0.
75 1.
2 0.
024 0.
03 2 "100 1 20 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.
1 A, di/dt = 100 A/ms VDD = 30 V, , RL = 30 W ID ^ 1 A A, VGEN = 10 V, V RG = 6 W VDS = 30 V, VGS = 10 V, ID = 7.
5 A 31 7.
7 8.
3 16 11 41 21 46 30 20 80 40 80 ns 50 nC Notes a...


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