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STS8816

SamHop
Part Number STS8816
Manufacturer SamHop
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description Green Product STS8816 Ver 3.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transisto...
Datasheet PDF File STS8816 PDF File

STS8816
STS8816

Overview
Green Product STS8816 Ver 3.
1 S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 17.
5 @ VGS=4.
5V 18.
5 @ VGS=4.
0V 20V 7A 19.
0 @ VGS=3.
7V 22.
0 @ VGS=3.
1V 27.
5 @ VGS=2.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD HBM > 2KV.
TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 7.
0 5.
6 45 a Units V V A A A W W °C Maximum Power Dissipation 1.
25 0.
8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice.
Apr,29,2011 1 www.
samhop.
com.
tw STS8816 Ver 3.
1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±12V , VDS=0V 1 ±10 RDS(ON) Drain-Source On-State Resistance VDS=VGS , ID=1mA VGS=4.
5V , ID=3.
5A VGS=4.
0V , ID=3.
5A VGS=3.
7V , ID=3.
5A VGS=3.
1V , ID=3.
5A VGS=2.
5V , ID=3.
5A 0.
5 13 13.
5 14 15 17.
5 0.
75 15 15.
5 16 18 22 20 1.
5 17.
5 18.
5 19 22 27.
5 V m ohm m ohm m ohm m ohm m ohm S pF pF pF gFS Forward Transconductance c VDS=5V , ID=3.
5A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=10V,VGS=0V f=1.
0MHz 298 ...


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