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SDP02N20

SamHop Microelectronics
Part Number SDP02N20
Manufacturer SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description Green Product SDP02N20 SDF02N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Tran...
Datasheet PDF File SDP02N20 PDF File

SDP02N20
SDP02N20

Overview
Green Product SDP02N20 SDF02N20 Ver 1.
0 S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V ID 2A R DS(ON) ( Ω) Typ 3.
0 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D G D S G D S G SDP SERIES TO-220 SDF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c a SDP02N20 SDF02N20 200 ±30 ±30 TC=25°C TC=100°C 2 1.
4 5.
9 81 TC=25°C TC=100°C 75 37.
5 25 12.
5 2 1.
4 5.
9 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range -55 to 175 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2 62.
5 6 62.
5 °C/W °C/W Details are subject to change without notice.
Sep,30,2013 1 www.
samhop.
com.
tw SDP02N20 SDF02N20 Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=160V , VGS=0V 200 1 ±100 V uA nA VGS= ±30V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) tr tD(OFF) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b b VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 3 3.
0 1.
3 4 3.
9 V ohm S VDS=25V,VGS=0V f=1.
0MHz 183 30 6 pF pF pF VDD=100V ID=1A VGS=10V RGEN= 6 ohm VDS=100V,ID=1A,VGS=10V VDS=100V,ID=1A, VGS=10V 9.
5 10 15.
4 ...


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