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STD428S

SamHop Microelectronics
Part Number STD428S
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description S T U/D428S S amHop Microelectronics C orp. Mar.8,2007 N-C hannel Logic Level E nhancement Mode Field E ffect Transist...
Datasheet PDF File STD428S PDF File

STD428S
STD428S

Overview
S T U/D428S S amHop Microelectronics C orp.
Mar.
8,2007 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID 50A R DS (ON) ( m Ω ı ) T yp 8 @ V G S = 10V 10 @ V G S = 4.
5V R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D D G S G D G S S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TC=25 C a -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 40 20 50 100 20 50 -55 to 175 Unit V V A A A W C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T U/D428S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.
5V, ID= 6A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A Min Typ C Max Unit 40 1 10 1 1.
7 8 10 30 26 1505 220 150 0.
3 23 19 85 27 28 12.
5 3 6 3 10 13 V uA uA V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =20V, V GS = 0V f =1.
0MH Z V GS =0V, V DS = 0V, f=1.
0MH Z V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =10A,V GS =10V V DS =15V, ID =10A,V GS =4.
5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =1...


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