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STB440S

SamHop Microelectronics
Part Number STB440S
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description Green Product STB/P440S Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect ...
Datasheet PDF File STB440S PDF File

STB440S
STB440S

Overview
Green Product STB/P440S Ver 1.
0 S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
ID 65A R DS(ON) (m Ω) Max 8 @ VGS=10V 11.
5 @ VGS=4.
5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TSTG MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation a b a Limit 40 ±20 65 52 191 196 Units V V A A A mJ W W °C TA=25 °C TA=70 °C TA=25 °C TA=70 °C 62.
5 40 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.
8 50 °C/W °C/W Apr,13,2009 1 www.
samhop.
com.
tw Downloaded from Elcodis.
com electronic components distributor STB/P440S Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V A nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b a VGS= ±20V , VDS=0V 1 ±100 3 8 11.
5 VDS=VGS , ID=250uA VGS=10V , ID=30A VGS=4.
5V , ID=25A VDS=5V , ID=30A 1 2 6 8.
5 40 1380 233 215 27 72 65 45 33.
5 17 3.
2 12 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=20V,VGS=0V f=1.
0MHz VDD=...


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