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STS6415

SamHop Microelectronics
Part Number STS6415
Manufacturer SamHop Microelectronics
Description P-Channel Enhancement Mode Field Effect Transistor
Published Oct 16, 2014
Detailed Description Gre r Pro STS6415 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT...
Datasheet PDF File STS6415 PDF File

STS6415
STS6415

Overview
Gre r Pro STS6415 Ver 1.
0 S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 100 @ VGS=-4.
5V 105 @ VGS=-4.
0V -20V -2.
8A 110 @ VGS=-3.
7V 121 @ VGS=-3.
1V 138 @ VGS=-2.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D SOT 26 Top View D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -2.
8 -2.
2 -10 a Units V V A A A W W °C Maximum Power Dissipation 1.
25 0.
8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice.
Sep,14,2012 1 www.
samhop.
com.
tw STS6415 Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-16V , VGS=0V Min -20 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±10V , VDS=0V 1 ±10 RDS(ON) Drain-Source On-State Resistance VDS=VGS , ID=-1mA VGS=-4.
5V , ID=-1.
4A VGS=-4.
0V , ID=-1.
4A VGS=-3.
7V , ID=-1.
4A VGS=-3.
1V , ID=-1.
4A VGS=-2.
5V , ID=-1.
4A VDS=-5V , ID=-1.
4A -0.
5 62 65 68 74 82 -0.
8 76 80 83 90 102 6 347 100 81 -1.
5 100 105 110 121 138 V m ohm m ohm m ohm m ohm m ohm S pF pF pF gFS Forward Transconductance c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=-10V,VGS=0V f=1.
0MHz VDD=-16V ID...


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