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M2F2G64CB88BHN

Part Number	M2F2G64CB88BHN
Manufacturer	Nanya
Description	Unbuffered DDR3 SDRAM DIMM
Published	Oct 18, 2014
Detailed Description	M2F2G64CB88B7N / M2F4G64CB8HB5N M2F2G64CB88BHN / M2F4G64CB8HB9N 2GB: 256M x 64 / 4GB: 512M x 64PC3-8500 / PC3-10600/PC-1...
Datasheet	M2F2G64CB88BHN PDF File

Overview

M2F2G64CB88B7N / M2F4G64CB8HB5N M2F2G64CB88BHN / M2F4G64CB8HB9N 2GB: 256M x 64 / 4GB: 512M x 64PC3-8500 / PC3-10600/PC-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333/1600 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Frequency tck – Clock Cycle fDQ – DQ Burst Frequency PC3-8500 -BE 7 533 1.
875 1066 PC3-10600 -CG 9 667 1.
5 1333 PC3-12800 -DI 11 800 1.
25 1600 MHz ns Mbps • Programmable Operation: - DIMM  Latency: 6,7,8,9,10,11 - Burst Type: Sequential or Interleave - Burst Length: BC4, BL8 - Operation: Burst Read and Write • Two different termination values (Rtt_Nom & Rtt_WR) • 15/10/1 (row/column/rank) Addressing for 2GB • 15/10/2 (row/column/rank) Addressing for 4GB • Extended operating temperature rage • Auto Self-Refresh option • Serial Presence Detect • Gold contacts • 2GB/4GB SDRAMs are in 78-ball BGA Package • RoHS compliance and Halogen free Unit • 240-Pin Dual In-Line Memory Module (UDIMM) • 256Mx64 (2GB) / 512Mx64 (4GB) DDR3 Unbuffered DIMM based on 256Mx8 DDR3 SDRAM B-Die devices.
• Intended for 533MHz/667MHz/800MHz applications • Inputs and outputs are SSTL-15 compatible • VDD = VDDQ = 1.
5V ± 0.
075V • SDRAMs have 8 internal banks for concurrent operation • Differential clock inputs • Data is read or written on both clock edges • DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive clock edge • Nominal and Dynamtic On-Die Termination support • Halogen free product Description M2F2G64CB88B7N / M2F4G64CB8HB5N / M2F2G64CB88BHN / M2F4G64CB8HB9N are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as one rank of 256Mx64 (2GB) and two ranks of 512Mx64 (4GB) high-speed memory array.
Modules use eight 256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices.
These DIMMs are manufactured using raw cards developed for broad industry use...

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