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SVD2N60DTR

Silan Microelectronics
Part Number SVD2N60DTR
Manufacturer Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Published Oct 19, 2014
Detailed Description SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode p...
Datasheet PDF File SVD2N60DTR PDF File

SVD2N60DTR
SVD2N60DTR

Overview
SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.
)=4.
0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVD2N60M SVD2N60M SVD2N60F SVD2N60T SVD2N60D SVD2N60DTR Package TO-251-3L TO-251D-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVD2N60M SVD2N60M SVD2N60F SVD2N60T SVD2N60D SVD2N60D Material Pb free Pb free Pb free Pb free Pb free Pb free Packing...


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