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23NM60ND

STMicroelectronics
Part Number 23NM60ND
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Oct 20, 2014
Detailed Description STW23NM60ND Datasheet N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package Features Order...
Datasheet PDF File 23NM60ND PDF File

23NM60ND
23NM60ND

Overview
STW23NM60ND Datasheet N-channel 600 V, 0.
150 Ω typ.
, 19.
5 A, FDmesh II Power MOSFET in a TO-247 package Features Order code VDS @ TJ max RDS(on) max.
ID t(s) 3 c 2 1 du TO-247 lete Pro D(2, TAB) STW23NM60ND 650 V • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications 0.
180 Ω 19.
5 A bso G(1) t(s) - O S(3) AM01475v1_noZen Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology.
Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance.
It is ideal for bridge topologies and ZVS phase-shift converters.
Obsolete Produc Product status link STW23NM60ND Product summary Order code STW23NM60ND Marking 23NM60ND Package TO-247 Packing Tube DS13218 - Rev 1 - January 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com STW23NM60ND Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter Value VDS Drain-source voltage 600 VGS Gate-source voltage ±25 ID Drain current (continuous) at TC = 25 °C ) ID Drain current (continuous) at TC = 100 °C t(s IDM(1) Drain current (pulsed) uc PTOT Total power dissipation at TC = 25 °C rod IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) P EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) te dv/dt(2) Peak diode recovery voltage slope le Tstg Storage temperature range so TJ Operating junction temperature range b 1.
Pulse width is limited by safe operating area.
O 2.
ISD ≤ 19.
5 A, di/dt ≤ 600 A/μs, VDD = 80% V(BR)DSS, VDS (peak) < V(BR)DSS.
uct(s) - Symbol d Rthj-case Obsolete Pro Rthj-amb Table 2.
Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient 19.
5 11.
7 78 150 9 700 40 -5...


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