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SVD10N60F

Silan Microelectronics
Part Number SVD10N60F
Manufacturer Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Published Oct 20, 2014
Detailed Description SVD10N60T/F_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N60T/F is an N-channel enhancement mode power ...
Datasheet PDF File SVD10N60F PDF File

SVD10N60F
SVD10N60F

Overview
SVD10N60T/F_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES ∗ 10A,600V,RDS(on)(typ.
)=0.
78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability N...


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