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F10NK50Z

STMicroelectronics
Part Number F10NK50Z
Manufacturer STMicroelectronics
Description STF10NK50Z
Published Oct 21, 2014
Detailed Description STF10NK50Z N-channel 500 V, 0.55 Ω , 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package Datasheet — product...
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F10NK50Z
F10NK50Z

Overview
STF10NK50Z N-channel 500 V, 0.
55 Ω , 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package Datasheet — production data Features Order code STF10NK50Z ■ ■ ■ ■ VDSS 500 V RDS(on) max < 0.
7 Ω ID 9A PTOT 30 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance 1 2 3 TO-220FP Applications ■ Switching application Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Figure 1.
Internal schematic diagram D(2) G(1) S(3) AM01476v1 Table 1.
Device summary Order code Marking F10NK50Z Package TO-220FP Packaging Tube STF10NK50Z March 2012 This is information on a product in full production.
Doc ID 022992 Rev 1 1/13 www.
st.
com 13 Contents STF10NK50Z Contents 1 2 Electrical ratings .
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3 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 4 5 Test circuit .
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8 Package mechanical data .
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9 Revision history .
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12 2/13 Doc ID 022992 Rev 1 STF10NK50Z Electrical ratings 1 Electrical ratings Table 2.
Symbol VDS VGS ID ID IDM(2) PTOT Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 500 ± 30 9 (1...


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