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MBSK14S

LGE
Part Number MBSK14S
Manufacturer LGE
Description Schottky Bridge Rectifier
Published Oct 27, 2014
Detailed Description MBSK12S THRU MBSK110S Schottky Bridge Rectifier Features 4.6¡À MBS 0.2 Io 1.0A VRRM 20V~100V Schottky chip High surg...
Datasheet PDF File MBSK14S PDF File

MBSK14S
MBSK14S

Overview
MBSK12S THRU MBSK110S Schottky Bridge Rectifier Features 4.
6¡À MBS 0.
2 Io 1.
0A VRRM 20V~100V Schottky chip High surge forward current capability Low VF 3.
8¡À 0.
2 2.
5¡À 0.
2 Applications General purpose 1 phase Bridge rectifier applications 0.
6¡À 0.
1 2.
5¡À 0.
25 1.
0¡À 6.
8¡À 0.
15 0.
2 0.
3¡À 0.
1 Dimensions in millimeters Limiting Values（Absolute Maximum Rating） Item Repetitive Peak Reverse Voltage Symbol Unit VRRM V Conditions MBSK 12S 14S 16S 18S 110S 20 40 60 80 100 Average Rectified Output Current IO A 60Hz sine wave, R-load, Ta=25℃ On alumina substrate On glass-epoxi substrate 1.
0 0.
8 40 Surge(Nonrepetitive)Forward Current Current Squared Time Storage Temperature Junction Temperature IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 2 It A2S ℃ ℃ 1ms≤t<8.
3ms Tj=25℃，Rating of per diode 6.
6 -55 ~+150 -55 ~+150 Tstg Tj Electrical Characteristics（Ta=25℃ Unless otherwise specified） Item Peak Forward Voltage Peak Reverse Current Symbol Unit VFM IRRM V mA Test Condition IFM=0.
5A, Pulse measurement, Rating of per diode VRM=VRRM , Pulse measurement, Rating of per diode Between junction and ambient, On alumina substrate 0.
55 Max 0.
65 0.
5 76 0.
85 Thermal Resistance RθJ-A ℃/W Between junction and ambient, On glass-epoxi substrate Between junction and lead 134 RθJ-L 20 http://www.
luguang.
cn mail:lge@luguang.
cn 1.
2¡À 0.
2 MBSK12S THRU MBSK110S Schottky Bridge Rectifier  Characteristics(Typical) FIG1:Io-Ta Curve 1.
8 soldering land conductor layer substrate thickness IFSM 8.
3ms 8.
3ms 1cycle Io(A) FIG2:Surge Forward Current Capadility ② 1mm×1mm 20um 0.
64mm 1.
5 ① 1mm×1mm 35um 70 60 50 40 0 sine wave 1.
2 on alumina substrate non-repetitive Tj=25℃ 0.
9 sine wave R-load with heatsink 30 20 0.
6 0.
3 on glass-epoxi substrate 10 0 0 0 40 80 120 160 Ta (℃ ) 1 2 5 10 20 50 100 Number of Cycles 6 4 2 1 MBSK12S~MBSK14S IR(mA) FIG3: Forward Voltage IF(A) FIG4:Typical Reverse Characteristics Tj=150℃ 10 100 0.
5 MBSK18S~MBSK110S MBSK16S Ta=2...


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