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KF6N60I

KEC
Part Number KF6N60I
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Oct 28, 2014
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet PDF File KF6N60I PDF File

KF6N60I
KF6N60I

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS(Min.
)= 600V, ID= 5A RDS(ON)=1.
4 (Max) @VGS =10V Qg(typ.
) =16nC 1 2 3 KF6N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60D A C K D L B H G F F J E N M DIM MILLIMETERS _ 0.
20 A 6.
60 + _ 0.
20 6.
10 + B _ 0.
30 5.
34 + C _ 0.
20 D 0.
70 + _ 0.
15 E 2.
70 + _ 0.
10 2.
30 + F 0.
96 MAX G 0.
90 MAX H _ 0.
20 1.
80 + J _ 0.
10 K 2.
30 + _ 0.
10 0.
50 + L _ 0.
10 M 0.
50 + 0.
70 MIN N 0.
1 MAX O MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 PD Derate above25 Tj Tstg 0.
56 150 -55 150 W/ 1 1...


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