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IRFH8311PBF

International Rectifier
Part Number IRFH8311PBF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 28, 2014
Detailed Description IRFH8311PbF VDS Vgs max 30 ± 20 2.1 3.2 30 80 V V mΩ nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.5V...
Datasheet PDF File IRFH8311PBF PDF File

IRFH8311PBF
IRFH8311PBF

Overview
IRFH8311PbF VDS Vgs max 30 ± 20 2.
1 3.
2 30 80 V V mΩ nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.
5V) Qg typ.
ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 1.
3°C/W) Low Profile (<1.
2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number IRFH8311TRPBF IRFH8311TR2PBF Standard Pack Orderable part number Note Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 IRFH8311TRPBF PQFN 5mm x 6mm Tape and Reel 400 IRFH8311TR2PBF EOL notice #259 Package Type Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation g Power Dissipation g Max.
30 ± 20 32 169 26 Units V c hi 107hi 80i 400 3.
6 96 A W W/°C °C Linear Derating Factor Operating Junction and g 0.
029 -55 to + 150 Storage Temperature Range Notes  through ‡ are on page 9 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback January 7, 2014 IRFH8311PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒV DSS/∆ TJ RDS(on) V GS(th) ∆ VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resista...


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