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IRFH8325TRPbF

International Rectifier
Part Number IRFH8325TRPbF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 28, 2014
Detailed Description IRFH8325PbF HEXFET® Power MOSFET VDS Vgs max 30 ± 20 5.0 7.2 15 25 V V mΩ nC PQFN 5X6 mm RDS(on) max (@VGS = 10V) (@V...
Datasheet PDF File IRFH8325TRPbF PDF File

IRFH8325TRPbF
IRFH8325TRPbF


Overview
IRFH8325PbF HEXFET® Power MOSFET VDS Vgs max 30 ± 20 5.
0 7.
2 15 25 V V mΩ nC PQFN 5X6 mm RDS(on) max (@VGS = 10V) (@VGS = 4.
5V) Qg typ ID (@Tc(Bottom) = 25°C) i A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 2.
3°C/W) Low Profile (<1.
2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number IRFH8325TRPbF IRFH8325TR2PbF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Max.
30 ± 20 21 17 82 52 Units V hi hi i A g g c 25 100 3.
6 54 0.
029 -55 to + 150 W W/°C °C Linear Derating Factor Operating Junction and g Storage Temperature Range Notes  through ‡ are on page 9 1 www.
irf.
com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFH8325PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate T...



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