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FDMA7670

Fairchild Semiconductor
Part Number FDMA7670
Manufacturer Fairchild Semiconductor
Description Single N-Channel MOSFET
Published Oct 29, 2014
Detailed Description FDMA7670 Single N-Channel Power Trench® MOSFET FDMA7670 Single N-Channel PowerTrench® MOSFET May 2014 30 V, 11 A, 15 ...
Datasheet PDF File FDMA7670 PDF File

FDMA7670
FDMA7670


Overview
FDMA7670 Single N-Channel Power Trench® MOSFET FDMA7670 Single N-Channel PowerTrench® MOSFET May 2014 30 V, 11 A, 15 mΩ Features General Description „ Max rDS(on) = 15 mΩ at VGS = 10 V, ID = 11 A „ Max rDS(on) = 22 mΩ at VGS = 4.
5 V, ID = 9 A „ Low Profile - 0.
8 mm maximum - in the new package MicroFET 2x2 mm „ Free from halogenated compounds and antimony oxides „ RoHS compliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters.
The low rDS(on) and gate charge provide excellent switching performance.
Application „ DC – DC Buck Converters Pin 1 Drain DD G Source Bottom Drain Contact D D D D G S DD S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 11 24 2.
4 0.
9 –55 to +150 Units V V A W °C RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 6.
9 (Note 1a) 52 (Note 1b) 145 °C/W Device Marking 670 Device FDMA7670 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMA7670 Rev.
C7 www.
fairchildsemi.
com FDMA7670 Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = 20 ...


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