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TSP8N60M

Truesemi
Part Number TSP8N60M
Manufacturer Truesemi
Description 600V N-Channel MOSFET
Published Oct 30, 2014
Detailed Description TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ru...
Datasheet PDF File TSP8N60M PDF File

TSP8N60M
TSP8N60M

Overview
TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.
5A,600v,RDS(on)=1.
2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings Symbol VDSS Drain to Source Voltage Continuous Drain Current(@TC = 25°C...


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