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HFS7N60

SemiHow
Part Number HFS7N60
Manufacturer SemiHow
Description 600V N-Channel MOSFET
Published Nov 1, 2014
Detailed Description HFS7N60 Dec 2005 BVDSS = 600 V HFS7N60 600V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Ava...
Datasheet PDF File HFS7N60 PDF File

HFS7N60
HFS7N60

Overview
HFS7N60 Dec 2005 BVDSS = 600 V HFS7N60 600V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.
) ) RDS(on) typ = 0.
96 Ω ID = 7.
0 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
96 Ω (Typ.
) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 7.
0* 4.
4* 28* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 420 70 7.
0 4.
8 5.
5 48 0.
38 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ.
--Max.
2.
6 62.
5 ℃/W Units ◎ SEMIHOW REV.
A0,Decy 2005 HFS7N60 Electrical Characteristics TC=25 °C Symbol y Parameter unless otherwise specified Test Conditions Min Typ y Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 3.
5 A 2.
5 --0.
96 4.
5 1.
2 V Ω Off Characteristics BVDSS D i S Drain-Source Breakdown B kd V Voltage lt VGS = 0 V V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.
65 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔT J ...


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