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IRFB4212PbF

International Rectifier
Part Number IRFB4212PbF
Manufacturer International Rectifier
Description Digital Audiio MOSFET
Published Nov 1, 2014
Detailed Description PD - 96918A DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS...
Datasheet PDF File IRFB4212PbF PDF File

IRFB4212PbF
IRFB4212PbF

Overview
PD - 96918A DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI • 175°C operating junction temperature for ruggedness • Can deliver up to 150W per channel into 4Ω load in half-bridge topology G S IRFB4212PbF Key Parameters 100 72.
5 15 8.
3 2.
2 175 D VDS RDS(ON) typ.
@ 10V Qg typ.
Qsw typ.
RG(int) typ.
TJ max V m: nC nC Ω °C TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI.
Additional features of this MOSFET are 175°C operating junction temperature and repetiti...


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